• In dieser Sektion des Forums werden Pressemitteilungen der Hersteller 1:1 veröffentlicht. Planet 3DNow! übernimmt weder für die Richtigkeit der Angaben noch für die Art der Formulierung jedwede Verantwortung. Oft sind Pressemitteilungen mit typischen Marketing-Floskeln wie "einer der bedeutendsten Herstellern von XY" versetzt. Diese Aussagen sind subjektiv und geben nicht notwendigerweise die Meinung der auf Planet 3DNow! schreibenden Autoren wieder.

T-RAM and GLOBALFOUNDRIES Enter into Joint Development Agreement for Application of T-RAM’s Thyristor-RAM Embedded Memory to

Pressemitteilung

Hinweis: Dieser Inhalt ist eine Pressemitteilung des Herstellers. Planet 3DNow! prüft weder die Richtigkeit der Angaben noch die Art der Formulierung. Pressemitteilungen können subjektiv sein und geben nicht notwendigerweise die Meinung der auf Planet 3DNow! schreibenden Autoren wieder.
... Advanced Technology Nodes

MILPITAS, Calif.--(BUSINESS WIRE)--T-RAM Semiconductor Inc. (T-RAM) and GLOBALFOUNDRIES announced today that they have entered into a joint development agreement targeted toward the application of T-RAM’s Thyristor-RAM embedded memory to advanced technology nodes.

According to Gregg Bartlett, Senior Vice President of Technology and R&D at GLOBALFOUNDRIES, “We are pleased to be jointly developing T-RAM memory for 32nm and 22nm technologies. T-RAM’s embedded memory technology shows a great deal of potential for use in low-power, high-performance dense cache applications for advanced technology nodes.”

Sam Nakib, President and CEO of T-RAM, added, “We are excited about working with GLOBALFOUNDRIES on the next generation embedded memory technology. T-RAM has successfully completed extensive development of the Thyristor-RAM technology and has delivered a fully manufacturable and robust memory solution with proven yield, reliability, and low-cost of integration in earlier technology nodes. We believe that GLOBALFOUNDRIES and their customers’ products provide a great opportunity to further develop and show-case T-RAM’s significant performance and economic advantages. T-RAM’s revolutionary Thyristor-RAM memory technology provides the highest combination of density and performance among all embedded memory technology candidates, and avoids the fundamental scalability challenges that face 6T-SRAM and other FET-based memory cells.”

About T-RAM Semiconductor:

T-RAM Semiconductor is the inventor and developer of the revolutionary Thyristor-RAM memory technology. The company develops and licenses memory IP based on its unique technology for embedded memory applications including high-performance or mobile computing/graphics processors, as well as various networking and telecommunication chips. For more information, visit www.t-ram.com.

About GLOBALFOUNDRIES:

GLOBALFOUNDRIES is the world’s first truly global leading-edge semiconductor manufacturing company. Launched in March 2009 through a partnership between AMD [NYSE: AMD] and the Advanced Technology Investment Company (ATIC), GLOBALFOUNDRIES provides a unique combination of leading-edge technology, manufacturing excellence and global operations. GLOBALFOUNDRIES is headquartered in Silicon Valley with facilities in Austin, Dresden and New York. For more information on GLOBALFOUNDRIES, visit www.globalfoundries.com.
 
Zurück
Oben Unten