Tuesday, December 12, Continental Ballroom 5

13.2 A 45 nm CMOS Node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology

IBM Systems and Technology Group, Advanced Micro Devices, Inc., Sony Electronics, Inc., Toshiba America Electronic Components, Inc., Infineon Technologies, AG, Samsung Electronics Co., Ltd., Chartered Semiconductor Mfg., Ltd., IBM SRDC, Hopewell Junction, NY

A high performance 45 nm BEOL technology is presented. A ULK SiCOH film was developed to have superior integration performance and mechanical properties. Reliability of wiring in both low-k and ULK levels are proven and fundamental solutions are implemented which enable successful ULK Chip-Package Interaction (CPI) reliability

Wednesday, December 13, Grand Ballroom B

27.3 High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

Advanced Micro Devices Inc., Hopewell Junction, NY, *SRDC, Hopewell Junction, NY

We present a 45-nm SOI CMOS technology that features: i) aggressive ground-rule (GR) scaling enabled by 1.2NA/193nm immersion lithography, ii) high-performance FET response enabled by the integration of multiple advanced strain, iii) a functional SRAM with cell size of 0.37μm2, and iv) a porous low-k (k=2.4) back-end dielectric. The list of FET-specific performance elements includes enhanced dual-stress liner, advanced eSiGe, stress memorization, and advanced anneal. The resulting PFET/NFET Idsat values, at Vdd of 1.0V and 45nm GR gate pitch, are 840μA/mm/1240μA/μm respectively. The global wiring delay achieved with k=2.4 reflects a 20% reduction compared to k=3.0.