SK hynix’s HBM2E sup­ports over 460GB (Giga­byte) per second with 1,024 I/Os (Inputs/Outputs) based on the 3.6Gbps (giga­bits-per-second) speed per­for­mance per pin. It is the fas­test DRAM solu­ti­on in the indus­try, being able to trans­mit 124 FHD (full-HD) movies (3.7GB each) per second. The den­si­ty is 16GB by ver­ti­cal­ly stack­ing eight 16Gb chips through TSV (Through Sili­con Via) tech­no­lo­gy, and it is more than dou­bled from the pre­vious gene­ra­ti­on (HBM2).

HBM2E boasts high-speed, high-capa­ci­ty, and low-power cha­rac­te­ristics; it is an opti­mal memo­ry solu­ti­on for the next-gene­ra­ti­on AI (Arti­fi­ci­al Intel­li­gence) sys­tems inclu­ding Deep Lear­ning Acce­le­ra­tor and High-Per­for­mance Com­pu­ting, which all requi­re high-level com­pu­ting per­for­mance. Fur­ther­mo­re, it is expec­ted to be appli­ed to the Exas­ca­le super­com­pu­ter – a high-per­for­mance com­pu­ting sys­tem which can per­form cal­cu­la­ti­ons a quin­til­li­on times per second – that will lead the rese­arch of next-gene­ra­ti­on basic and appli­ed sci­ence, such as cli­ma­te chan­ges, bio-medics, and space exploration.

“SK hynix has been in the fore­front of tech­no­lo­gy inno­va­ti­on that con­tri­bu­tes to human civi­liza­ti­on with achie­ve­ments inclu­ding the world’s first deve­lo­p­ment of HBM pro­ducts,” said Jongho­on Oh, Exe­cu­ti­ve Vice Pre­si­dent and Chief Mar­ke­ting Offi­cer (CMO) at SK hynix. “With the full-sca­le mass-pro­duc­tion of HBM2E, we will con­ti­nue to streng­then our pre­sence in the pre­mi­um memo­ry mar­ket and lead the fourth indus­tri­al revolution.”

Anno­ta­ti­on

• HBM (High Band­width Memo­ry)
  - High per­for­mance, high band­width memo­ry pro­ducts that adopt TSV tech­no­lo­gy to dra­ma­ti­cal­ly acce­le­ra­te data pro­ces­sing speed over tra­di­tio­nal DRAMs.
• TSV (Through Sili­con Via)
  - An inter­con­nec­ting tech­no­lo­gy that con­nects the upper and lower chips through thou­sands of fine holes on DRAM chip.
  - Deli­vers data, com­mands, and curr­ents through column-shaped paths that pene­tra­te the enti­re sili­con wafer thic­k­ness after stack­ing mul­ti­ple DRAM chips on the buf­fer chip.
  - Up to 30% decrease in size and up to 50% decrease in power con­sump­ti­on over exis­ting pack­a­ging methods.
• Stan­dards for data pro­cess speed con­ver­si­on
  - 1GB = 8Gb
  - 3.6Gbps per pin with 1024 data I/Os (Inputs/Outputs) = 3686.4Gbps
  - 3686.4Gbps / 8 = 460.8GB/s (Gb -> GB conversion)

About SK hynix Inc.

SK hynix Inc., head­quar­te­red in Korea, is the world’s top tier semi­con­duc­tor sup­pli­er offe­ring Dyna­mic Ran­dom Access Memo­ry chips (“DRAM”), flash memo­ry chips (“NAND flash”) and CMOS Image Sen­sors (“CIS”) for a wide ran­ge of distin­gu­is­hed cus­to­mers glo­bal­ly. The Company’s shares are traded on the Korea Exch­an­ge, and the Glo­bal Depo­si­to­ry shares are lis­ted on the Luxem­burg Stock Exch­an­ge. Fur­ther infor­ma­ti­on about SK hynix is available at www.skhynix.com, news.skhynix.com.