Schlagwort: HBM2E
SK Hynix Starts Mass-Production of High-Speed DRAM, “HBM2E”
SEOUL, South Korea, July 1, 2020 — SK hynix Inc. (or ‘the Company,’ www.skhynix.com) announced that it has started the full-scale mass-production of high-speed DRAM, ‘HBM2E’, only ten months after the Company announced the development of the new product in August last year. SK hynix’s HBM2E supports over 460GB (Gigabyte) per second with 1,024 I/Os (Inputs/Outputs) based on (…) Weiterlesen »
Synopsys Delivers Silicon-Proven HBM2E PHY IP Operating at 3.2 Gbps
DesignWare HBM2E PHY IP in TSMC’s N7 Process Delivers High Throughput for Advanced Graphics, High-Performance Computing and Networking SoCs MOUNTAIN VIEW, Calif., Feb. 25, 2020 /PRNewswire/ – Highlights: Synopsys’ DesignWare HBM2E IP in TSMC’s N7 process provides up to 409 GBps aggregate memory bandwidth with low-power consumption and latency The HBM2E PHY has been verified using TSMC’s CoWoS® technology (…) Weiterlesen »
Samsung to Advance High Performance Computing Systems with Launch of Industry’s First 3rd-generation (16GB) HBM2E
New HBM2E stacks eight 16Gb DRAM dies to achieve 16GB package capacity and ensures a stable data transfer speed at 3.2Gbps Samsung Electronics, the world leader in advanced memory technology, today announced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high (…) Weiterlesen »
Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
SAN JOSE, Calif.–Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced its new High Bandwidth Memory (HBM2E) product at NVIDIA’s GPU Technology Conference (GTC) to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI). The new solution, Flashbolt™, is the industry’s first HBM2E (…) Weiterlesen »