Schlagwort: Samsung

Samsung Electronics Develops Second-Generation SmartSSD Computational Storage Drive With Upgraded Processing Functionality

Cuts pro짯ces짯sing time by over 50%, ener짯gy con짯sump짯ti짯on by up to 70% and CPU uti짯liza짯ti짯on by up to 97% com짯pared to con짯ven짯tio짯nal SSD drives

Sam짯sung Elec짯tro짯nics, the world lea짯der in advan짯ced memo짯ry tech짯no짯lo짯gy, today announ짯ced that it has suc짯cessful짯ly deve짯lo짯ped a second gene짯ra짯ti짯on of its pio짯nee짯ring SmartSSD.

The new pro짯prie짯ta짯ry com짯pu짯ta짯tio짯nal sto짯rage incor짯po짯ra짯tes data pro짯ces짯sing func짯tion짯a짯li짯ty within a high-per짯for짯mance SSD. Unli짯ke exis짯ting SSDs, Samsung셲 SmartS짯SD can pro짯cess data direct짯ly, ther짯eby mini짯mi짯zing data trans짯fers bet짯ween the CPU, GPU and RAM. This tech짯no짯lo짯gy can avo짯id the bot짯t짯len짯ecks that often occur when moving data bet짯ween sto짯rage devices and CPUs, resul짯ting in mark짯ed짯ly impro짯ved sys짯tem per짯for짯mance and much hig짯her ener짯gy effi짯ci짯en짯cy. () Wei짯ter짯le짯sen 쨩

Samsung Introduces Game Changing Exynos 2200 Processor With Xclipse GPU Powered By AMD RDNA 2 Architecture

The new pre짯mi짯um mobi짯le pro짯ces짯sor comes with hard짯ware-acce짯le짯ra짯ted ray tra짯cing and sta짯te of the art Arm-based pro짯ces짯sing technology

Sam짯sung Elec짯tro짯nics, a world lea짯der in advan짯ced semi짯con짯duc짯tor tech짯no짯lo짯gy, today announ짯ced its new pre짯mi짯um mobi짯le pro짯ces짯sor, the Exy짯nos 2200. The Exy짯nos 2200 is a fresh짯ly desi짯gned mobi짯le pro짯ces짯sor with a powerful AMD RDNA 2 archi짯tec짯tu짯re based Sam짯sung Xclip짯se gra짯phics pro짯ces짯sing unit (GPU). With the most cut짯ting-edge Arm-based CPU cores available in the mar짯ket today and an upgraded neu짯ral pro짯ces짯sing unit (NPU), the Exy짯nos 2200 will enable the ulti짯ma짯te mobi짯le pho짯ne gam짯ing expe짯ri짯ence, as well as enhan짯cing the over짯all expe짯ri짯ence in social media apps and photography.

Built on the most advan짯ced 4몁anometer (nm) EUV (extre짯me ultra짯vio짯let litho짯gra짯phy) pro짯cess, and com짯bi짯ned with cut짯ting-edge mobi짯le, GPU and NPU tech짯no짯lo짯gy, Sam짯sung has craf짯ted the Exy짯nos 2200 to pro짯vi짯de the finest expe짯ri짯ence for smart짯phone users. With the Xclip짯se, our new mobi짯le GPU built with RDNA 2 gra짯phics tech짯no짯lo짯gy from the indus짯try lea짯der AMD, the Exy짯nos 2200 will rede짯fi짯ne mobi짯le gam짯ing expe짯ri짯ence, aided by enhan짯ced gra짯phics and AI per짯for짯mance, said Yon짯gin Park, Pre짯si짯dent of Sys짯tem LSI Busi짯ness at Sam짯sung Elec짯tro짯nics. 쏛s well as brin짯ging the best mobi짯le expe짯ri짯ence to the users, Sam짯sung will con짯ti짯nue its efforts to lead the jour짯ney in logic chip inno짯va짯ti짯on. () Wei짯ter짯le짯sen 쨩

Samsung Develops Industry셲 First LPDDR5X DRAM

Samsung셲 LPDDR5X DRAM will provide over 1.3x faster processing speeds and consumer nearly 20% less power than the previous LPDDR5 solution

The LPDDR5X solution will broaden the use of high-performance, low-power memory beyond smartphones to AI and edge applications

 

Sam짯sung Elec짯tro짯nics Co., Ltd., the world lea짯der in advan짯ced memo짯ry tech짯no짯lo짯gy, today announ짯ced that it has deve짯lo짯ped the industry셲 first 14-nano짯me짯ter (nm) based 16-giga짯bit (Gb) Low Power Dou짯ble Data Rate 5X (LPDDR5X) DRAM, desi짯gned to dri짯ve fur짯ther growth throug짯hout the high-speed data ser짯vice appli짯ca짯ti짯ons inclu짯ding 5G, arti짯fi짯ci짯al intel짯li짯gence (AI) and the metaverse.
() Wei짯ter짯le짯sen 쨩

Samsung Develops Industry셲 First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications

512GB capa짯ci짯ty DDR5 modu짯le made pos짯si짯ble by an 8멿ayer TSV structure
HKMG mate짯ri짯al redu짯ces power by 13 per짯cent while doubling the speed of DDR4

Sam짯sung Elec짯tro짯nics, the world lea짯der in advan짯ced memo짯ry tech짯no짯lo짯gy, today announ짯ced that it has expan짯ded its DDR5 DRAM memo짯ry port짯fo짯lio with the industry셲 first 512GB DDR5 modu짯le based on High멚 Metal Gate (HKMG) pro짯cess tech짯no짯lo짯gy. Deli짯ve짯ring more than twice the per짯for짯mance of DDR4 at up to 7,200 mega짯bits per second (Mbps), the new DDR5 will be capa짯ble of orchest짯ra짯ting the most extre짯me com짯pu짯te-hun짯gry, high-band짯width workloads in super짯com짯pu짯ting, arti짯fi짯ci짯al intel짯li짯gence (AI) and machi짯ne lear짯ning (ML), as well as data ana짯ly짯tics appli짯ca짯ti짯ons. () Wei짯ter짯le짯sen 쨩

Samsung Develops Industry셲 First High Bandwidth Memory with AI Processing Power

Korea on Febru짯ary 17, 2021

The new archi짯tec짯tu짯re will deli짯ver over twice the sys짯tem performance
and redu짯ce ener짯gy con짯sump짯ti짯on by more than 70%

Sam짯sung Elec짯tro짯nics, the world lea짯der in advan짯ced memo짯ry tech짯no짯lo짯gy, today announ짯ced that it has deve짯lo짯ped the industry셲 first High Band짯width Memo짯ry (HBM) inte짯gra짯ted with arti짯fi짯ci짯al intel짯li짯gence (AI) pro짯ces짯sing power the HBM-PIM. The new pro짯ces짯sing-in-memo짯ry (PIM) archi짯tec짯tu짯re brings powerful AI com짯pu짯ting capa짯bi짯li짯ties insi짯de high-per짯for짯mance memo짯ry, to acce짯le짯ra짯te lar짯ge-sca짯le pro짯ces짯sing in data cen짯ters, high per짯for짯mance com짯pu짯ting (HPC) sys짯tems and AI-enab짯led mobi짯le appli짯ca짯ti짯ons. () Wei짯ter짯le짯sen 쨩

Samsung angeblich mit Yield-Problemen bei 8몁m wechselt Nvidia zur체ck zu TSMC?

Nach짯dem Nvi짯dia vor짯ges짯tern Lie짯fer짯eng짯p채s짯se bei der GeForce RTX 3080 und 3090 bis hin짯ein ins n채chs짯te Jahr auf Grund einer enor짯men Nach짯fra짯ge best채짯tig짯te (Tom셲 Hard짯ware), f체hrt ein Bericht der chi짯ne짯si짯schen Digi짯Ti짯mes nun an, dass Sam짯sung bei der 8몁m-Fer짯ti짯gung angeb짯lich Pro짯ble짯me mit der Aus짯beu짯te an funk짯ti짯ons짯f채짯hi짯gen Chips (Yield) hat und man bei Nvi짯dia nun wohl 체ber einen Wech짯sel zu TSMC nach짯den짯ken w체rde.
() Wei짯ter짯le짯sen 쨩

Samsung Announces Availability of its Silicon-Proven 3D IC Technology for High-Performance Applications

Sam짯sung 쁙멌ube enables indus짯try-first 3D SRAM-logic working sili짯con at 7nm and bey짯ond. Band짯width and den짯si짯ty can be sca짯led to suit diver짯se design requi짯re짯ments in emer짯ging appli짯ca짯ti짯ons. Korea on August 13, 2020 Sam짯sung Elec짯tro짯nics, a world lea짯der in advan짯ced semi짯con짯duc짯tor tech짯no짯lo짯gy, today announ짯ced the imme짯dia짯te avai짯la짯bi짯li짯ty of its sili짯짯con-pro짯짯ven 3D IC pack짯a짯ging tech짯no짯lo짯gy, eXten짯짯ded-Cube (X멌ube), () Wei짯ter짯le짯sen 쨩

Globalfoundries vor Expansion und Beteiligung durch Samsung?

횥ber Glo짯bal짯found짯ries wur짯de bei uns schon l채n짯ger nicht mehr berich짯tet, nach짯dem AMD immer mehr Chips beim Kon짯kur짯ren짯ten TSMC fer짯ti짯gen l채sst. Die ehe짯ma짯li짯gen Fabri짯ken von AMD und IBM und fer짯ti짯gen heu짯te vor allem Chips f체r AI und Auto짯mo짯ti짯ve-Kun짯den. Nach dem 14-nm-Pro짯zess wur짯de die feins짯te Fer짯ti짯gungs짯stu짯fe mit 12 nm schon von Sam짯sung lizen짯siert. Die geplan짯te Fer짯ti짯gung mit einer Struk짯tur짯brei짯te von 7 nm gestri짯chen. Damit ver짯lor Glo짯bal짯found짯ries vor allem Kun짯den in der Pro짯zes짯sor짯fer짯ti짯gung an den Kon짯kur짯ren짯ten TSMC. () Wei짯ter짯le짯sen 쨩

Samsung Electronics Begins Mass Production at New EUV Manufacturing Line

Korea on Febru짯ary 20, 2020   Samsung셲 EUV capa짯ci짯ty under 7nm will tri짯ple by end of 2020 To start ship짯ping first 7 and 6nm-based mobi짯le chips from V1 line in 1Q Sam짯sung Elec짯tro짯nics, a world lea짯der in advan짯ced semi짯con짯duc짯tor tech짯no짯lo짯gy, today announ짯ced that its new cut짯짯ting-edge semi짯con짯duc짯tor fabri짯ca짯ti짯on line in Hwa짯se짯ong, Korea, has begun mass pro짯duc짯tion.   The faci짯li짯ty, () Wei짯ter짯le짯sen 쨩

Samsung to Advance High Performance Computing Systems with Launch of Industry셲 First 3rd-generation (16GB) HBM2E

New HBM2E stacks eight 16Gb DRAM dies to achie짯ve 16GB packa짯ge capa짯ci짯ty and ensu짯res a sta짯ble data trans짯fer speed at 3.2Gbps Sam짯sung Elec짯tro짯nics, the world lea짯der in advan짯ced memo짯ry tech짯no짯lo짯gy, today announ짯ced the mar짯ket launch of 쁅lash짯bolt, its third-gene짯ra짯짯ti짯on High Band짯width Memo짯ry 2E (HBM2E). The new 16-giga짯짯by짯te (GB) HBM2E is uni짯que짯ly sui짯ted to maxi짯mi짯ze high () Wei짯ter짯le짯sen 쨩

Samsung셲 PM1733 SSD and High Density DIMMs Support AMD EPYC꽓 7002 Series Processor

USA on August 9, 2019   Sam짯sung Elec짯tro짯nics has taken its lea짯der짯ship posi짯ti짯on in the memo짯ry mar짯ket a step fur짯ther today by announ짯cing sup짯port of the Sam짯sung PM1733 PCIe Gen4 Solid Sta짯te Dri짯ve (SSD) and high den짯si짯ty RDIMM1 and LRDIMM2 dyna짯mic ran짯dom access memo짯ry (DRAM) for the AMD EPYC꽓 7002 Gene짯ra짯ti짯on Pro짯ces짯sors. AMD laun짯ched the 2nd Gen AMD EPYC꽓 pro짯ces짯sor () Wei짯ter짯le짯sen 쨩

Samsung will in zwei Jahren Produkte auf Basis von SoCs mit integrierter AMD RDNA-Grafik anbieten

Nach짯dem Sam짯sung und AMD bereits im Juni eine stra짯te짯gi짯sche Part짯ner짯schaft ver짯k체n짯det hat짯ten, in der ver짯ein짯bart wur짯de, dass Sam짯sung AMDs Rade짯on-DNA-Archi짯tek짯tur zur Ver짯wen짯dung in Mobil짯ge짯r채짯ten lizen짯siert, gab Sam짯sung in der letz짯ten Wochen im Rah짯men der Pr채짯sen짯ta짯ti짯on der Zah짯len des zwei짯ten Quar짯tals einen Zeit짯rah짯men f체r das Erschei짯nen ers짯ter Pro짯duk짯te an. () Wei짯ter짯le짯sen 쨩

AMD and Samsung Announce Strategic Partnership in Ultra Low Power, High Performance Graphics Technologies

Sam짯sung to inte짯gra짯te cus짯tom AMD Rade짯on꽓 gra짯phics IP into future SoCs for mobi짯le appli짯ca짯ti짯ons SEOUL, South Korea & SANTA CLARA, Calif.  06/03/2019 AMD (NASDAQ: AMD) and Sam짯sung Elec짯tro짯nics Co., Ltd. today announ짯ced a mul짯짯ti-year stra짯te짯gic part짯ner짯ship in ultra low power, high per짯for짯mance mobi짯le gra짯phics IP based on AMD Rade짯on gra짯phics tech짯no짯lo짯gies. As part of the part짯ner짯ship, Sam짯sung will licen짯se () Wei짯ter짯le짯sen 쨩

Intel: Keine Ryzen-Konkurrenz in 10 nm vor 2022

Intels 10-nm-Desas짯ter wird immer mas짯si짯ver. Eigent짯lich soll짯ten Intels Fabs in dem Fer짯ti짯gungs짯pro짯zess schon seit 2015 flei짯횩ig Pro짯zes짯so짯ren aus짯spu짯cken, tat짯s채ch짯lich fer짯ti짯gen sie seit letz짯tem Jahr ers짯te Volu짯men짯ein짯hei짯ten, die aber mit defek짯ter Gra짯fik짯ein짯heit auf den asia짯ti짯schen Markt gebracht wur짯den. AMD wird ver짯mut짯lich Mit짯te die짯ses Jah짯res ers짯te Pro짯zes짯so짯ren in 7 nm Struk짯tur짯brei짯te auf den Markt brin짯gen, wobei TSMCs 7 nm wohl ver짯gleich짯bar fein wie Intels 10 nm sind. Damit h채t짯te AMD einen mas짯si짯ven Tech짯no짯lo짯gie-Vor짯sprung f체r die kom짯men짯den Jah짯re. () Wei짯ter짯le짯sen 쨩

Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI

SAN JOSE, Calif.밪amsung Elec짯tro짯nics Co., Ltd., the world lea짯der in advan짯ced semi짯con짯duc짯tor tech짯no짯lo짯gy, today announ짯ced its new High Band짯width Memo짯ry (HBM2E) pro짯duct at NVIDIAGPU Tech짯no짯lo짯gy Con짯fe짯rence (GTC) to deli짯ver the hig짯hest DRAM per짯for짯mance levels for use in next-gene짯ra짯짯ti짯on super짯com짯pu짯ters, gra짯phics sys짯tems, and arti짯fi짯ci짯al intel짯li짯gence (AI). The new solu짯ti짯on, Flash짯bolt꽓, is the industry셲 first HBM2E () Wei짯ter짯le짯sen 쨩