Samsung to Advance High Performance Computing Systems with Launch of Industry’s First 3rd-generation (16GB) HBM2E

New HBM2E stacks eight 16Gb DRAM dies to achieve 16GB package capacity and ensures a stable data transfer speed at 3.2Gbps

Sam¬≠sung Elec¬≠tro¬≠nics, the world lea¬≠der in advan¬≠ced memo¬≠ry tech¬≠no¬≠lo¬≠gy, today announ¬≠ced the mar¬≠ket launch of ‚ÄėFlash¬≠bolt‚Äô, its third-gene¬≠ra¬≠ti¬≠on High Band¬≠width Memo¬≠ry 2E (HBM2E). The new 16-giga¬≠byte (GB) HBM2E is uni¬≠que¬≠ly sui¬≠ted to maxi¬≠mi¬≠ze high per¬≠for¬≠mance com¬≠pu¬≠ting (HPC) sys¬≠tems and help sys¬≠tem manu¬≠fac¬≠tu¬≠r¬≠ers to advan¬≠ce their super¬≠com¬≠pu¬≠ters, AI-dri¬≠ven data ana¬≠ly¬≠tics and sta¬≠te-of-the-art gra¬≠phics sys¬≠tems in a time¬≠ly manner.


‚ÄúWith the intro¬≠duc¬≠tion of the hig¬≠hest per¬≠forming DRAM available today, we are taking a cri¬≠ti¬≠cal step to enhan¬≠ce our role as the lea¬≠ding inno¬≠va¬≠tor in the fast-gro¬≠wing pre¬≠mi¬≠um memo¬≠ry mar¬≠ket,‚ÄĚ said Cheol Choi, exe¬≠cu¬≠ti¬≠ve vice pre¬≠si¬≠dent of Memo¬≠ry Sales & Mar¬≠ke¬≠ting at Sam¬≠sung Elec¬≠tro¬≠nics. ‚ÄúSam¬≠sung will con¬≠ti¬≠nue to deli¬≠ver on its com¬≠mit¬≠ment to bring tru¬≠ly dif¬≠fe¬≠ren¬≠tia¬≠ted solu¬≠ti¬≠ons as we rein¬≠force our edge in the glo¬≠bal memo¬≠ry marketplace.‚ÄĚ


Rea¬≠dy to deli¬≠ver twice the capa¬≠ci¬≠ty of the pre¬≠vious-gene¬≠ra¬≠ti¬≠on 8GB HBM2 ‚ÄėAquabolt‚Äô, the new Flash¬≠bolt also shar¬≠ply increa¬≠ses per¬≠for¬≠mance and power effi¬≠ci¬≠en¬≠cy to signi¬≠fi¬≠cant¬≠ly impro¬≠ve next-gene¬≠ra¬≠ti¬≠on com¬≠pu¬≠ting sys¬≠tems. The 16GB capa¬≠ci¬≠ty is achie¬≠ved by ver¬≠ti¬≠cal¬≠ly stack¬≠ing eight lay¬≠ers of 10nm-class (1y) 16-giga¬≠bit (Gb) DRAM dies on top of a buf¬≠fer chip. This HBM2E packa¬≠ge is then inter¬≠con¬≠nec¬≠ted in a pre¬≠cise arran¬≠ge¬≠ment of more than 40,000 ‚Äėthrough sili¬≠con via‚Äô (TSV) micro¬≠bumps, with each 16Gb die con¬≠tai¬≠ning over 5,600 of the¬≠se micro¬≠sco¬≠pic holes.


Samsung’s Flash­bolt pro­vi­des a high­ly relia­ble data trans­fer speed of 3.2 giga­bits per second (Gbps) by lever­aging a pro­prie­ta­ry opti­mi­zed cir­cuit design for signal trans­mis­si­on, while offe­ring a memo­ry band­width of 410GB/s per stack. Samsung’s HBM2E can also attain a trans­fer speed of 4.2Gbps, the maxi­mum tes­ted data rate to date, enab­ling up to a 538GB/s band­width per stack in cer­tain future appli­ca­ti­ons. This would repre­sent a 1.75x enhance­ment over Aquabolt’s 307GB/s.


Sam­sung expects to begin volu­me pro­duc­tion during the first half of this year. The com­pa­ny will con­ti­nue pro­vi­ding its second-gene­ra­ti­on Aquabolt lin­e­up while expan­ding its third-gene­ra­ti­on Flash­bolt offe­ring, and will fur­ther streng­then col­la­bo­ra­ti­ons with eco­sys­tem part­ners in next-gene­ra­ti­on sys­tems as it acce­le­ra­tes the tran­si­ti­on to HBM solu­ti­ons throug­hout the pre­mi­um memo­ry market.