New HBM2E stacks eight 16Gb DRAM dies to achieve 16GB package capacity and ensures a stable data transfer speed at 3.2Gbps
Sam¬≠sung Elec¬≠tro¬≠nics, the world lea¬≠der in advan¬≠ced memo¬≠ry tech¬≠no¬≠lo¬≠gy, today announ¬≠ced the mar¬≠ket launch of ‚ÄėFlash¬≠bolt‚Äô, its third-gene¬≠ra¬≠ti¬≠on High Band¬≠width Memo¬≠ry 2E (HBM2E). The new 16-giga¬≠byte (GB) HBM2E is uni¬≠que¬≠ly sui¬≠ted to maxi¬≠mi¬≠ze high per¬≠for¬≠mance com¬≠pu¬≠ting (HPC) sys¬≠tems and help sys¬≠tem manu¬≠fac¬≠tu¬≠r¬≠ers to advan¬≠ce their super¬≠com¬≠pu¬≠ters, AI-dri¬≠ven data ana¬≠ly¬≠tics and sta¬≠te-of-the-art gra¬≠phics sys¬≠tems in a time¬≠ly manner.
‚ÄúWith the intro¬≠duc¬≠tion of the hig¬≠hest per¬≠forming DRAM available today, we are taking a cri¬≠ti¬≠cal step to enhan¬≠ce our role as the lea¬≠ding inno¬≠va¬≠tor in the fast-gro¬≠wing pre¬≠mi¬≠um memo¬≠ry mar¬≠ket,‚ÄĚ said Cheol Choi, exe¬≠cu¬≠ti¬≠ve vice pre¬≠si¬≠dent of Memo¬≠ry Sales & Mar¬≠ke¬≠ting at Sam¬≠sung Elec¬≠tro¬≠nics. ‚ÄúSam¬≠sung will con¬≠ti¬≠nue to deli¬≠ver on its com¬≠mit¬≠ment to bring tru¬≠ly dif¬≠fe¬≠ren¬≠tia¬≠ted solu¬≠ti¬≠ons as we rein¬≠force our edge in the glo¬≠bal memo¬≠ry marketplace.‚ÄĚ
Rea¬≠dy to deli¬≠ver twice the capa¬≠ci¬≠ty of the pre¬≠vious-gene¬≠ra¬≠ti¬≠on 8GB HBM2 ‚ÄėAquabolt‚Äô, the new Flash¬≠bolt also shar¬≠ply increa¬≠ses per¬≠for¬≠mance and power effi¬≠ci¬≠en¬≠cy to signi¬≠fi¬≠cant¬≠ly impro¬≠ve next-gene¬≠ra¬≠ti¬≠on com¬≠pu¬≠ting sys¬≠tems. The 16GB capa¬≠ci¬≠ty is achie¬≠ved by ver¬≠ti¬≠cal¬≠ly stack¬≠ing eight lay¬≠ers of 10nm-class (1y) 16-giga¬≠bit (Gb) DRAM dies on top of a buf¬≠fer chip. This HBM2E packa¬≠ge is then inter¬≠con¬≠nec¬≠ted in a pre¬≠cise arran¬≠ge¬≠ment of more than 40,000 ‚Äėthrough sili¬≠con via‚Äô (TSV) micro¬≠bumps, with each 16Gb die con¬≠tai¬≠ning over 5,600 of the¬≠se micro¬≠sco¬≠pic holes.
Samsung‚Äôs Flash¬≠bolt pro¬≠vi¬≠des a high¬≠ly relia¬≠ble data trans¬≠fer speed of 3.2 giga¬≠bits per second (Gbps) by lever¬≠aging a pro¬≠prie¬≠ta¬≠ry opti¬≠mi¬≠zed cir¬≠cuit design for signal trans¬≠mis¬≠si¬≠on, while offe¬≠ring a memo¬≠ry band¬≠width of 410GB/s per stack. Samsung‚Äôs HBM2E can also attain a trans¬≠fer speed of 4.2Gbps, the maxi¬≠mum tes¬≠ted data rate to date, enab¬≠ling up to a 538GB/s band¬≠width per stack in cer¬≠tain future appli¬≠ca¬≠ti¬≠ons. This would repre¬≠sent a 1.75x enhance¬≠ment over Aquabolt‚Äôs 307GB/s.
Sam¬≠sung expects to begin volu¬≠me pro¬≠duc¬≠tion during the first half of this year. The com¬≠pa¬≠ny will con¬≠ti¬≠nue pro¬≠vi¬≠ding its second-gene¬≠ra¬≠ti¬≠on Aquabolt lin¬≠e¬≠up while expan¬≠ding its third-gene¬≠ra¬≠ti¬≠on Flash¬≠bolt offe¬≠ring, and will fur¬≠ther streng¬≠then col¬≠la¬≠bo¬≠ra¬≠ti¬≠ons with eco¬≠sys¬≠tem part¬≠ners in next-gene¬≠ra¬≠ti¬≠on sys¬≠tems as it acce¬≠le¬≠ra¬≠tes the tran¬≠si¬≠ti¬≠on to HBM solu¬≠ti¬≠ons throug¬≠hout the pre¬≠mi¬≠um memo¬≠ry market.