Schlagwort: Flashbolt

Samsung to Advance High Performance Computing Systems with Launch of Industry셲 First 3rd-generation (16GB) HBM2E

New HBM2E stacks eight 16Gb DRAM dies to achie짯ve 16GB packa짯ge capa짯ci짯ty and ensu짯res a sta짯ble data trans짯fer speed at 3.2Gbps Sam짯sung Elec짯tro짯nics, the world lea짯der in advan짯ced memo짯ry tech짯no짯lo짯gy, today announ짯ced the mar짯ket launch of 쁅lash짯bolt, its third-gene짯ra짯짯ti짯on High Band짯width Memo짯ry 2E (HBM2E). The new 16-giga짯짯by짯te (GB) HBM2E is uni짯que짯ly sui짯ted to maxi짯mi짯ze high () Wei짯ter짯le짯sen 쨩

Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI

SAN JOSE, Calif.밪amsung Elec짯tro짯nics Co., Ltd., the world lea짯der in advan짯ced semi짯con짯duc짯tor tech짯no짯lo짯gy, today announ짯ced its new High Band짯width Memo짯ry (HBM2E) pro짯duct at NVIDIAGPU Tech짯no짯lo짯gy Con짯fe짯rence (GTC) to deli짯ver the hig짯hest DRAM per짯for짯mance levels for use in next-gene짯ra짯짯ti짯on super짯com짯pu짯ters, gra짯phics sys짯tems, and arti짯fi짯ci짯al intel짯li짯gence (AI). The new solu짯ti짯on, Flash짯bolt꽓, is the industry셲 first HBM2E () Wei짯ter짯le짯sen 쨩