512GB capa­ci­ty DDR5 modu­le made pos­si­ble by an 8‑layer TSV structure
HKMG mate­ri­al redu­ces power by 13 per­cent while doubling the speed of DDR4

Sam­sung Elec­tro­nics, the world lea­der in advan­ced memo­ry tech­no­lo­gy, today announ­ced that it has expan­ded its DDR5 DRAM memo­ry port­fo­lio with the industry’s first 512GB DDR5 modu­le based on High‑K Metal Gate (HKMG) pro­cess tech­no­lo­gy. Deli­ve­ring more than twice the per­for­mance of DDR4 at up to 7,200 mega­bits per second (Mbps), the new DDR5 will be capa­ble of orchest­ra­ting the most extre­me com­pu­te-hun­gry, high-band­width workloads in super­com­pu­ting, arti­fi­ci­al intel­li­gence (AI) and machi­ne lear­ning (ML), as well as data ana­ly­tics appli­ca­ti­ons. (…) Wei­ter­le­sen »