Schlagwort: Flashbolt
Samsung to Advance High Performance Computing Systems with Launch of Industry’s First 3rd-generation (16GB) HBM2E
New HBM2E stacks eight 16Gb DRAM dies to achieve 16GB package capacity and ensures a stable data transfer speed at 3.2Gbps Samsung Electronics, the world leader in advanced memory technology, today announced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high (…) Weiterlesen »
Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
SAN JOSE, Calif.–Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced its new High Bandwidth Memory (HBM2E) product at NVIDIA’s GPU Technology Conference (GTC) to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI). The new solution, Flashbolt™, is the industry’s first HBM2E (…) Weiterlesen »